Paper Title
Optical Characterization of Wide –Band Gap Semiconductor Doped with Al Prepared by Pulsed Laser Deposition Technique

Abstract
In this work, aluminum (Al) was doped into ZnO nanoparticles. Samples were prepared firstly as undoped and then followed by the growth of ZnO nanoparticles doped by three different (3, 6 and 12 at. %) aluminum concentrations using pulsed laser deposition (PLD) technique. Al doping on the optical properties of ZnO nanoparticles were studied and reported. Keywords - Aluminum, Band -Gap, Pulsed Laser Deposition, Zinc Oxide