Paper Title
The Optical and Electrical Properties of Zno and Fe-Doped ZNO Thin Films By Using R.F. Sputtering deposition

Abstract
ZnO is a promising material of transparent conductive oxides (TCOs), and ZnO has been reported as doping common impurities (Al, Ga, B, etc.) to change its chemical and physical properties. In this study, the ZnO thin film and Fe-doped ZnO (FZO) thin film were fabricated by R.F. sputtering deposition. The structural, morphological, optical, and electrical properties of these two films were investigated via X-ray diffractometer (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy, and 4156C semiconductor parameter analyzer. The XRD patterns showed all the films with a (002) preferred orientation. The roughness of both films increased with the increasing sputtering power. In addition, the average transmittance of the ZnO and FZO thin films within the visible-light range (380~780 nm) was about 80 %. The band gap of the FZO thin film was beyond 3.37 eV (band gap of ZnO thin film is 3.37 eV), which may be due to the Burstein-Moss effect. Moreover, the result of the I-V measurement revealed the electrical resistivity becomes lower owing to the Fe-doping onto ZnO thin film. Keywords- ZnO thin film, Fe-doped ZnO film, transparent conductive oxide, R.F. sputtering deposition.