Paper Title
Fabrication of as Doped P-Type ZNO NANORODS

Abstract
ZnO with wurtzite structure have a wide band gap of 3.37 eV. Because ZnO has a direct band gap and large exciton binding energy, it has higher optical efficiency and thermal stability than GaN of the blue light emitting device. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type dopoing are needed. Many research groups have devoted to fabricate stable p-type ZnO up to date. In this study, As ions was implanted by ion implanter to fabricate p-type ZnO. After ion implant, rapid thermal annealing (RTA) was conducted to activate As dopants. The structural, optical, and electrical properties of ZnO nanorods were investigated before and after ion implantation and annealed ZnO using FE-SEM, XRD, PL, and Hall measurement by stages. And the structural, optical, and electrical properties of ZnO nanorods depending on As ion dose variation and RTA temperature were analyzed same methods Keywords - Nanorods, ZnO, Ion implantation