Two Dimensional Hexagonal Boron Nitride/Polymer Nanoco Mposite For Flexible Resistive Switching Applications
Organic-inorganic hybrid nanocomposite is an attractive choice for various electronic device applications. In this study, we have explored the bipolar resistive switching memory device based on a hybrid nanocomposite of 2D material, boron nitride (BN) and a polymer, polyvinyl alcohol (PVOH). The fabrication of this flexible memory device has been carried out by using an all printed approach including electrohydrodynamic atomization (EHDA) and reciprocating head (RPC). The device has a sandwich structure with PET/ITO/BN-PVOH/Ag configuration. Three different top electrode sizes (42 μm, 70 μm and 100 μm) were printed on the active layer to observe its effect on resistive switching and validate the conduction mechanism. The fabricated device displayed nonvolatile, rewritable and characteristic bistable resistive switching at a low current compliance and small operating voltage. A high off/on ratio, endurance and retention time were recorded. Conduction mechanism was deduced to be conductive filamentary and verified by the effect of device size. Bendability test at various bending diameters (50-4 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device. Remarkably stable and repeatable results of electrical and mechanical characterization makes this hybrid nanocomposite a potential candidate for the future flexible, robust and low power nonvolatile memory.
Keywordsó Nanocomposite, RPC, h-BN, resistive switching