Paper Title
GROWING (BiFeO3) THIN FILMS ON SILICON SUBSTRATES USING THE LIQUID PHASE DEPOSITION (LPD) METHODWITH THREE CHELATING AGENTS

Abstract
This experiment uses liquid phase deposition (LPD) to deposit (BiFeO3) on a silicon substrate to make MOS capacitors. The liquid deposition method was chosen because of its advantages of simple process, low cost, and extremely low growth temperature. In the experiment, the effects of using three chelating agents on the measured electrical properties of BiFeO3 films were explored. The purpose of adding chelating agent is to prevent the basic salt of Bi from settling at the bottom of the cup, and the experimental ratio of BiFeO3 to chelating agent is (1:1). According to the experimental results, it was found that C2H2O4 among the three chelating agents has better electrical characteristics. Film thickness, oxide capacitance (Cox), k-value, flat band capacitance (CFB), equivalent oxide thickness (EOT), interface state density (Dit), oxide layer captured charge density (Notm) and effective oxide charge density (Qeff) are 165.2 nm,127 pf,33.5,3.93582× 10-11 pF,19.20896 nm,4.98× 1010 eV-1cm-2,1.46× 1011 cm-2,and -1.01× 1011 cm-2, respectively.It is successfully found the best chelating agent for BiFeO3 in the experiment,which has a high dielectric constant k-value, the lowest interface state density and good I-V and C-V curves. Keywords - BiFeO3;Chelating Agents; Liquid Phase Deposition