Paper Title
Design of Zinc Sulphide Material-Based Field Effect Transistor with Physics of Semiconductor Devices

Abstract
The paper presents the design of Zinc Sulphide (ZnS) material-based Field Effect Transistor (FET) with physics of semiconductor devices. The main research challenge is to estimate the physical properties of ZnS-based FET without using experimental setup in a laboratory and the research direction for solving this challenge is to implement the programming platform for evaluate the targeted properties by physics of semiconductor devices and MATLAB language. The switching characteristics for proposed ZnS-based FET with voltage and current characteristics from the specific physical parameters of the targeted semiconductor material in Group II and VI in a periodic table. After observing the theoretical results with numerical techniques, the developed ZnS-based FET could be utilized in the high-performance switching power electronic converter circuits. Keywords - Zinc Sulphide (ZnS), Field Effect Transistor, Physics of Semiconductor Devices, MATLAB, Numerical Analysis