Paper Title
SYNTHESIS OF TITANIUM-BASED OXIDE MATERIAL USING A LOW PROCESS TEMPERATURE FOR RESISTIVE MEMORY APPLICATIONS

Abstract
Abstract - Titanium-based oxide materialsare synthesized using a sol-gel procedure with low baking temperatures of 180-200 °C.In addition, the precursors and solutions used in the sol-gel process are non-toxic. Besides titanium oxide (TiO2), Bi-doped TiO2 is also synthesized for improving the electrical characteristics of a resistive random-accessmemory (RRAM). The TiO2:Bi solution is prepared by titanium isopropoxide and bismuth nitrate pentahydrate. The ratios of TiO2: Bi are 0.44:1 (0.65 M) and 1:1 (1.27 M). A n+-Si substrate is used as the bottom electrode. Two spin coating speeds are utilized to deposit the TiO2:Bi films on the substrate. The baking temperatures are 180-200 °C. After that, an Al top electrode was deposited using a thermal evaporator. Finally, electrical characteristics are measured by a semiconductor parameter analyzer with voltage loops of 0 10 V0-10 V0 .When using a W-probe as the electrode, clear resistive switching behavior cannot be obtained. Significant RS feature can be observed when using Al as the top electrode. However, a small memory window is found. A higher doping condition leads to unstable RS characteristics. When the TiO2:Bi thickness is decreased, a significant and stable memory window can be obtained. Performance improvement of the memory is obtained by controlling the doping concentration and thickness of the TiO2:Bi thin film.A high-performance Al/TiO2:Bi/n+-Si RRAM with an ultra large memory window of 105 is successfully fabricated using a thinner TiO2:Bi layer with a higher doping concentration. This study can be applied to future low-cost, low-temperature, and high-throughput RRAM technology. Keywords - Titanium alloys, Resistive Memory, Electrical Characterization, Sol-Gel