Paper Title
The Effect Mole Fraction And Lithograph On The Noise Performance Of Sige Hbts

Abstract
This paper discussed the effect of changingthestripe emitter area and of mole fraction and lithography on the SiGe HBT Prrformance. When the Lithography when decreseased into 0,12μm2 and 0,09μm2 and mole fraction increased. Parameter Base resistance (rB) , the current gain (β) has a positive relationship whileresistancecolector (rc), frequency treshold (fT) and maximum (fmaks) will be opposite. The model with parameters lithography0.18 μm2,mole fraction (x) 0.1%, has the lowest minimum value of Noise Figure (Fn) compared with the lithography of 0.12μm and 0.09 μm there are 0.57 dB, 0.64 dB, 0, 69 dB. Finnaly if the mole fractionpressed to 50%, Noise Figure (Fn) will be increasesuntil 89%. Keyswords� Noise Figure, lithography area , fraction mole,, SiGe HBT