Paper Title
TCAD Simulation Study of TSV Annealing Effects

In this work, a study of TSV thermo-mechanical stress behavior is reported using both analytical analysis and Sentaurus TCAD tool. The TSV thermal-mechanical behavior is investigated under different annealing temperatures, radii, liner thicknesses, and different filling material. The phenomenon of Cu protrusion during thermal annealing of a TSV wafer is also presented. Furthermore, the Keep-Out-Zone (KOZ) is determined for all cases. The results indicate that as the annealing temperature increases both the generated stresses and the copper protrusion increase. The simulation results are compared to both experimental and previously simulated results from literature giving a good match. Keywords - Through silicon via; 3D integration; Thermal stresses; Analytical analysis; TCAD simulations.