Paper Title
The Controls of Quality and Uniformity for GaN Nanowire Structures

Abstract
The optimizations of quality and uniformity for gallium nitride (GaN) nanowire structures have been demonstrated by using the method of crystal growth in a chemical vapor deposition (CVD) reactor. The successful surface migration of gallium (Ga) atoms to the surface defects on the nanowires was achieved by increasing the substrate temperature, improving the crystalline quality of GaN. By appropriately decreasing the process pressure, the growth rate of GaN might become slower with the decrease of gas phase reaction, which could increase the uniformity of nanowire densities. When the growth rate is slower than the rate of solid-state diffusion, the crystalline qualities could be improved consistently throughout the entire substrate. The techniques for the controls of quality and uniformity would be widely employed to the processes of one- dimensional nanomaterials, may produce many applications in the future. Keywords - Gallium Nitride (GaN), Nanowire Structures, Crystalline Quality, Uniformity