Paper Title
SI MOS Capacitor with O2 Annealed ZRO2/AL2O3 Gate Oxide Prepared By Liquid Phase Deposition

Abstract
According to Moore's law proposed by Gordon Moore, one of Intel's founders, the quantity of transistors willincrease an orderin each integrated circuit every 18-24 months. Because of the thickness of SiO2 dielectric layer gets to the limit, the use of high dielectric constant materials becomes important, such as ZrO2, TiO2, Al2O3, HfO2, and Y2O3. Thecapacitance value of these materials is higher than SiO2 films but provide low leakage current. In this study, threekinds of Metal-Oxide-Semiconductor(MOS) structure,liquid phase deposited (LPD) Al2O3,ZrO2 and ZrO2/Al2O3on P-type silicon (Si) substrate were fabricated. At the beginning,the Al2O3 deposition solution is composed ofAl2(SO4)3•18H2O and NaHCO3. The deposition time is kept at 1 hour.Afterthe deposition of Al2O3 film,the ZrO2 was stacked on Al2O3 and then annealed at 550oC in O2 to reduce oxygen vacancies in the film. The purpose of Al2O3 is that ithas more barrier height (Φb) to blockleakage current.The electrical properties of Al/ZrO2/Al2O3/Si MOS are obtained from high frequency (1 MHz) C-V measurement.It shows thatthe oxide capacitance(Cox), flat band capacitance (CFB), flat band voltage (VFB), dielectric constant (k),effective oxide charge (QEFF) and interfacial state density (Dit) are 188pF, 41.90pF, -0.426V, 20, 6.38× 1011 cm-2 and 1.2× 10-12eV-1cm-2, respectively. It is the first time to deposit novel double oxide layers on Si by LPD. It indicatesthat leakage current effectively reducedwith double oxide layers and shows good electrical properties. Keywords - Liquid Phase Deposition; ZrO2; Al2O3; Double Oxide Layers