Paper Title
Low Annealing Temperature Effect on the Structural, Electrical and Optical Properties of MEH-PPV Thin Films

Abstract
Organic semiconductor have been discovered in different application devices such as organic light emitting diodes (OLED). Poly [2-methoxy-5(2’ –ethylhexyloxy)-1, 4- phenylenevinylene), MEH-PPV widely used because its ability to produce a good optical quality of films.The MEH-PPV thin films dissolved in aromatic solvent (toluene) to produce p-type conducting active layer. It was found that the optimum MEH-PPV thin films annealed at temperature of 50oC.The MEH-PPV thin films were deposited at different annealing temperatures. The scanning electron micrographs (SEM) and atomicforce microscope (AFM) measurement revealed that at sampleannealed at 50oC showed uniformity, lessaggregation and high roughness on morphology and topology, respectively. The MEH-PPV was dissolved in toluene solution to exhibits different optical and electrical properties. The I-V measurement showed the MEH-PPV thin films become more conductive at 50oC. The electrical properties of MEH-PPV thin films revealed the highest conductivity of 8.05 x 10-6S.cm-1. The absorption coefficient and optical bandgap of deposited MEH-PPV thin films were measured using UV-Visible-NIR (UV-VIS-NIR). This studyprovidedsuitable properties for optoelectronic devices especially for OLED applications. Keywords - MEH-PPV; Annealing Temperature; Structural; Properties; Optical Properties