Paper Title
Mist-CVD Growth of SnO2 Films with Different Spraying Configuration

Abstract
Oxide semiconductors are put into practical use in many electronic fields. Sputtering and PLD methods are mainly used for film formation of these oxide semiconductors. The Mist CVD method dose not require a vacuum process, and has an advantage that a film can be formed using a solvent having a high vapor pressure. In the past, indium-doped SnO2 and crystal structure control have been reported.1,2) With this approach, although diverse material of thin films such as SnO and ZnO have been demonstrated, there is still a room to disclose structural controllability to investigate mechanisms. Therefore, we conducted an experiment focusing on the spraying method of SnO2 film formation by ultrasonic spraying. We have developed a Mist-CVD set up to prepare tin oxide (SnOx) thin film with various nanostructures. Two type of configurations were used to control the film surface structures. (see Fig.1) Chemical vapor deposition (CVD), and used this method to deposit tin oxide thin films. 45 mL of ethanol mixed with SnCl4・5H2O (4 mM , 5 mL) solution was misted by ultrasonic vibration. The mist was sprayed onto the quartz substrate using N2 as a carrier gas. The temperature of a substrate was fixed at 200-400 ℃.