Paper Title
Molecular Dynamics Analysis of Temperature and Scratching Speedon Mechanical Response of Sige on SI(001) Substrate

Abstract
Molecular dynamics (MD) simulations were conducted to investigate the influence of temperature and scratching speed on the mechanical response of Si50Ge50 on Si(001) substrate during nanoscratching. Firstly, the MD simulations of Si50Ge50 thin films deposited on Si substrate were established. Secondly, the MD simulations of nanoscratching processes were performed on the same specimen considering different temperature and scratching speed. The results indicate thatthe elastic and plastic deformations occurs in the contact region. A higher temperature leads to more deformation, higher pile-up,lower normal force and tangential force. The normal force and the tangential force decrease as increasing the scratching speed.The thermal softening effect caused by the cutting heat is the main factor leading to this phenomenon. Keywords - Deposition, Nanoscratching, Temperature, Germanium, Silicon.