Paper Title
Highly Conductive Transparent P-Type Lacuos Thin Film Prepared Via A Novel Method

Abstract
P-type transparent conducting oxides (TCOs) are crucial for future optoelectronics including transparent electronics. As a promising candidate for p-type TCO, oxychalcogenideLaCuOS has attracted much research effort due to its outstanding performance. In this work, a novel thin film fabrication method is proposed to prepare high quality single phase LaCuOS thin film in a safe, economically efficient and easy way. It is noted that the oxychalcogenide sputter or pulsed laser deposition (PLD) targets preparation and usage of H2S gas are always required in the current LaCuOS thin film fabrication process. Our newly developed thin film fabrication route eliminates the tedious, costly and complicated process of oxychalcogenide sputter or PLD targets preparation as well as the usage of extremely toxic H2S gas. With the easily available La2O3 and Cu sputter targets and relatively safer sulfur powders, high performance LaCuOS thin film could be fabricated in this work. The p-type electrical conductivity of 0.2 Scm-1 is among the best LaCuOS thin films reported so far, and it also demonstrates great room temperature photoluminescence properties. Additionally, detailed study was carried out to analyze the failure of thin film delafossite CuLaO2 phase formation on quartz/sapphire substrates by co-sputtering, which was the intended precursor phase for LaCuOS film initially. Key words- p-type semiconductors, oxychalcogenide, transparent oxide, p-n junction, sputtering