Paper Title
High Speed-High Sensitive Temperature Sensing Integrated Devices for a Wide Temperature Range Operation Using TFET Devices

Abstract
Semiconducting sensors are becoming increasingly complex particularly with compact and high speed systems. Therefore, it is challenging to monitor temperature change associated withhigh speeddynamic systems. Design of temperature sensors is always based on the temperature range of sensing; that may target very low temperatures as applied to cryogenics or very high temperatures as applied to heating coil furnaces. Resistive, capacitive, and device based sensors are currently used in NEMS (Nano Electro Mechanical Systems) and MEMS (Micro Electro Mechanical systems) systems. The current CMOS technology howeverlacks issuesrelated to sensitivity, linearity, reliability, as well asintegration within systems. In this work, we propose TFET (Tunneling Field Effect Transistors)based temperature sensors that are superior over the current silicon CMOS technology, featuring high-speed response, low power consumption, and better linearity with accuracy. TFET devices are proposed here for high sensitivity within the range from70 K to near 400 K. A TFET Op Amp. was designed, simulated, and fully characterized for this application.A gain bandwidth product of nearly 360 gain, and 7.4MHzwas estimated with input impedance near infinity within a range of 300MHz, and falls below 1MΩ in the GHz range. The output resistance was found to be 1.6 MΩ. A linear vout/vinslope of360 was observedover an input range of 0 to 1.0V. The TFET Op Amp was analyzed for minimum NF and high stability factor within 2GHz frequency range. As low as 2.4 NF (noise figure) was estimated, and as high as 6.5 stability factor was observed. The input and output impedance matching were determined via ADS (Advanced DesignSystems) CAD tools for minimum NF. The highest temperature sensitivity at the optimum sensor design was found to be 3.6 mV/K. The temperature sensor shows higher impact of the reference voltage on the sensitivity at very low temperatures as compared to higher temperatures. The TFET devices used in this approachareintegrated intoan Op. Amp SOC systems.