Paper Title
The Effect Of Tio2 Volume Fraction On The Microstructure And Magnetic Properties Of Mnal Thin Film

Abstract
The effect of TiO2 doping on MnAl films are systematically studied. The MnAl:TiO2 thin films were prepared by co-sputtering using MnAl and TiO2 target at a growth temperature of 300°C. DC sputtering was used for MnAl while RF sputtering was used for the case of TiO2.The magnetic and structural properties of MnAl:TiO2 films were also studied. The incorporation of TiO2 into MnAl have significant change on the structure and magnetic properties of MnAl films. With the incorporation of above 7.5% TiO2, the -phase is completely destroyed. The perpendicular coercivity of MnAl:TiO2 films was found to change with TiO2 content, and obtained maximum at 5%. The change in roughness of MnAl:TiO2 films were also observed. The roughness of MnAl:TiO2 thin films increases with the incorporation of the TiO2 and then decreases with the increase of TiO2 content. Keywords - Epitaxial growth, buffer layer, -phase, magnetic anisotropy constant.