Selective-Area Oxidation of Graphene Grown by Chemical Vapor Deposition
Graphene is an interesting material because it has remarkable properties such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young’s modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single-layer growth of single- and few-layer graphene is possible by using transition metals via thermal CVD process. Similar to graphene, graphene oxide also offers a wide range of application possibilities such as sensor technology, energy-related material, biomedical, etc. Here we present selective-area oxidation of graphene grown by CVD. The graphene was transferred to the SiO2/Si wafer before oxidation. The oxidized surface and the pristine surface of the graphene were analyzed by Raman spectroscopy, x-ray photoelectron spectroscopy etc.
Keywords - Graphene, Oxidation, Chemical Vapor Deposition.