Paper Title
Investigation Of Strain States And Schottky Barrier Parameters Of Strained-Si-On-Insulator (SSOI) Structures

Abstract
We have investigated the strain states of Si-on-insulator (sSOI) using reciprocal space mapping (RMS) and demonstrated its electrical properties through the fabrication of Al Schottky rectifiers. The sSOI wafers were manufactured by bonding a strained Si layer epitaxially grown on a relaxed Si0.8Ge0.2 directly to the buried oxide using SMARTCUT technology. From RSM measuremnts the strain was calculated to be 0.78%. The Schottky barrier parmeters of Al/sSOI Schottky contacts were extracted using temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics. When increasing temperatures, the barrier height increased and the ideality factor decreased, as shown in Fig. 1. The barrier heights determined from the C-V measurements are higher than those extracted from the I-V measurements, implying the formation of an inhomogeneous Schottky barrier at the interface. The series resistance estimated using Cheung and Norde me-thods was found to be strongly dependent on temperature, i.e., the series resistance decreasing with increasing temperature. The lateral inhomogeneity of the Schottky barrier and potential fluctuations at the interface be-tween Al and sSOI could be a main cause of the difference between the calculated and theoretical values of the Richardson constant. On the basis of a thermionic emission mechanism with a Gaussian distribution of the bar-rier heights, temperature dependency of Al Schottky contact to sSOI was explained in terms of the barrier height inhomogeneities at the interface . Keywords- sSOI, Al, Schottky contact, barrier height, idealith factor, barrier inhomogeneity.