Paper Title
Numerical Analysis Of CISE Solar Cells By SCAPS Simulation

Abstract
It is predicted that photovoltaic energy will be more important in future electricity generation. Silicone is a typical solar cell material. Although silicone is an abundant material in nature, it requires intensive processes to crystallize and purify. CISe (CuInSe2) based chalcopyrite materials are very promising for solar cells as absorbance layer. Instead of the silicon solar cell, CISe solar cell is a very good alternative. These materials have high absorption coefficient (3x105 cm-1) and direct energy band gap.These features allow the material to be thinner (a few micrometers) and reduce material consumption. CISe has an extremely high absorption rate that allows 99 percent of the available light to be absorbed in the first micron of material. These properties make CISe suitable material for the polycrystalline thin film solar cell fabrication. n-type semiconductor materials for CISe solar cells are used as buffer layer. The band gap of the buffer materials should be between 2.0 and 3.6 eV, and this layer also positively affects the electrical properties of the cell. The most commonly used buffer material is CdS. It especially contributes to producing high efficiency solar cells. CdS has a wide band gap, good electrical properties and good optical transmittance. In addition, it protects absorbance layer against mechanical damage. In this study, a simulation study of the based on CISe solar cells with SCAPS is presented. The n-ZnO/n-CdS/CISe cell structure was numerically simulated. Purpose of simulation is to predict the effect of the optimum input parameters on the device before production. Keywords - Photovoltaic, Solar Cell, CISe, Simulation